sanrex 50 seaview blvd. port washington, ny 11050-4618 ph.(516)625-1313 fax(516)625-8845 e-mail: semi@sanrex.com pk ( pd,pe ) 70fg thyristor module symbol item conditions ratings 70 unit i t av ? average on-state current i t rms ? r.m.s. on-state current single phase, half wave, 180 ? conduction, tc 1 84 ? single phase, half wave, 180 ? conduction, tc 1 84 ? i tsm ? surge on-state current i 2 t ? i 2 t p gm peak gate power dissipation p g av average gate power dissipation i fgm peak gate current v fgm peak gate voltage (forward) 1 ? 2 cycle, 50 / 60h z , peak value, non-repetitive value for one cycle surge current a 110 a 1460 / 1600 a 10660 10 a 2 s w 1 v rgm peak gate voltage (reverse) di / dt critical rate of rise of on-state current i g 1 100ma | v d 1 1 ? 2 v drm | di g / dt 1 0.1a / s tj ? operating junction temperature tstg ? storage temperature mounting torque mounting m5 terminal m5 mass recommended value 1.5-2.5 15-25 recommended value 1.5-2.5 15-25 typical value 3 w a 10 v 5 v 100 a / s 40 u p 125 ? v iso ? isolation breakdown voltage r.m.s. a.c. 1minute 2500 v 40 u p 125 2.7 28 2.7 28 170 ? n k m f k b g symbol item conditions ratings 20 unit i drm repetitive peak off-state current,max i rrm ? repetitive peak reverse current,max tj 1 125 ?| v d 1 v drm tj 1 125 ?| v d 1 v drm v tm ? on-state voltage,max i gt gate trigger current,max v gd gate non-trigger voltage,min dv / dt critical rate of rise of off-state voltage,min i t 1 210a v d 1 6v | i t 1 1a ma 20 ma 1.6 v 50 tj 1 125 ?| v d 1 1 ? 2 v drm 0.25 ma v gt gate trigger voltage,max v d 1 6v | i t 1 1a 3 v v tj 1 125 ?| v d 1 2 ? 3 v drm rth j-c ? thermal impedance,max junction to case 1000 v / s 0.37 ? / w electrical characteristics maximum ratings tj 1 25 ? unless otherwise specified } } } } } ?} / " . & |